Normally closed type with reinforced insulation (AQV410EH, 414EH) (AQV412EH) GE 1 Form B (AQV41❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 16 25 34 RoHS compliant FEATURES 1. 1 Form B output type 2. 60V type couples high capacity (0.55A) with low on-resistance (Typ. 1Ω). 3. Low on-resistance This has.
1. 1 Form B output type 2. 60V type couples high capacity (0.55A) with low on-resistance (Typ. 1Ω). 3. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
Passivation membrane
Source electrode Gate electrode
Intermediate insulating
membrane
N+ P+ N+
N+ P+ N+
Gate oxidation membrane
N
– N+
Drain electrode
4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-l.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AQV414E |
Panasonic |
Photo MOS Relay | |
2 | AQV414 |
Etc |
HIGH VOLTAGE/ PHOTO MOS RELAY | |
3 | AQV414 |
Panasonic |
Photo MOS Relay | |
4 | AQV414A |
Etc |
HIGH VOLTAGE/ PHOTO MOS RELAY | |
5 | AQV414A |
Panasonic |
Photo MOS Relay | |
6 | AQV414S |
Etc |
HIGH VOLTAGE/ PHOTO MOS RELAY | |
7 | AQV410EH |
Panasonic |
Photo MOS Relay | |
8 | AQV412EH |
Panasonic |
Photo MOS Relay | |
9 | AQV453 |
Panasonic |
Photo MOS Relay | |
10 | AQV453 |
NAiS |
Photo MOS Relay | |
11 | AQV453A |
Panasonic |
Photo MOS Relay | |
12 | AQV453A |
NAiS |
Photo MOS Relay |