The Super Bright Orange devices is made with DH InGaAlP (on GaAs substrate) light emitting diode chip. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAD1007 APPROVED: J. Lu REV NO: V.3 CHECKED: Allen Liu DATE:.
3.2mmx1.6mm SMT LED,1.05mm THICKNESS. LOW POWER CONSUMPTION. WIDE VIEWING ANGLE. IDEAL FOR BACKLIGHT AND INDICATOR. VAVRIOUS COLORS AND LENS TYPES AVAILABLE. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Description The Super Bright Orange devices is made with DH InGaAlP (on GaAs substrate) light emitting diode chip. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.2(0.008") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAD1007 APPROVED: J. Lu REV NO: V.3 CHECKED: Allen Liu DATE: MAR/20/2005 DRAWN: W.J.ZHU.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APTR3216SYC |
Kingbright Corporation |
SMD CHIP LED LAMP | |
2 | APTR3216SYCK |
Kingbright |
SMD LED | |
3 | APTR3216MGC |
Kingbright |
SMD LED | |
4 | APTR3216QWF-G |
Kingbright |
SMD LED | |
5 | APT05DC120HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
6 | APT06DC60HJ |
Microsemi |
SiC Diode Full Bridge Power Module | |
7 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
8 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
9 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET | |
10 | APT1001R1HVR |
Advanced Power Technology |
MOSFET | |
11 | APT1001R3BN |
Advanced Power Technology |
MOSFET | |
12 | APT1001R6BFLL |
Advanced Power Technology |
POWER MOS 7 R FREDFET |