APT8056BVR 800V 16A 0.560Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 • Faster Switching • Lower Leakag.
epetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 16 0.56 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 050-5564 Rev B Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) .
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT8056BVFR |
Advanced Power Technology |
Power MOSFET | |
2 | APT8052BFLL |
Advanced Power Technology |
Power MOSFET | |
3 | APT8052BFLL |
INCHANGE |
N-Channel MOSFET | |
4 | APT8052BLL |
Advanced Power Technology |
Power MOSFET | |
5 | APT8052BLL |
INCHANGE |
N-Channel MOSFET | |
6 | APT8052SFLL |
Advanced Power Technology |
Power MOSFET | |
7 | APT8052SLL |
Advanced Power Technology |
Power MOSFET | |
8 | APT8058HVR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
9 | APT8011JFLL |
Advanced Power Technology |
Power MOSFET | |
10 | APT8011JLL |
Advanced Power Technology |
Power MOSFET | |
11 | APT8014JFLL |
Advanced Power Technology |
Power MOSFET | |
12 | APT8014JLL |
Advanced Power Technology |
Power MOSFET |