APT8052SLL - Advanced Power Technology

APT8052SLL Power MOSFET

APT8052BLL APT8052SLL 800V 15A 0.520Ω POWER MOS 7 R MOSFET BLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching lRoDsSs(OeNs) along with except.

Features

olts ±40 298 Watts 2.38 W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 15 30 1210 °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS(on) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.5A) 800 0.52 IDSS Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gat.