APT5010JVR 500V 44A 0.100Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SO ISOTOP ® 2 T- 27 "UL Recog.
tts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 44 0.100 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 050-5531 Rev C Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Cur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT5010JVFR |
Advanced Power Technology |
Power MOSFET | |
2 | APT5010JVRU2 |
Advanced Power Technology |
Power MOSFET | |
3 | APT5010JVRU3 |
Advanced Power Technology |
Power MOSFET | |
4 | APT5010JFLL |
Advanced Power Technology |
Power MOSFET | |
5 | APT5010JLC |
Advanced Power Technology |
Power MOSFET | |
6 | APT5010JLL |
Advanced Power Technology |
Power MOSFET | |
7 | APT5010JLLU2 |
Microsemi Corporation |
ISOTOP Boost chopper MOSFET | |
8 | APT5010JLLU3 |
Microsemi Corporation |
ISOTOP Buck chopper MOSFET | |
9 | APT5010JN |
Advanced Power Technology |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
10 | APT5010B2 |
Advanced Power Technology |
Power MOSFET | |
11 | APT5010B2FLL |
Advanced Power Technology |
Power MOSFET | |
12 | APT5010B2FLL |
INCHANGE |
N-Channel MOSFET |