APT5010JVR |
Part Number | APT5010JVR |
Manufacturer | Advanced Power Technology |
Description | APT5010JVR 500V 44A 0.100Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases pa... |
Features |
tts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 44 0.100 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5531 Rev C
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Cur... |
Document |
APT5010JVR Data Sheet
PDF 71.39KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT5010JVFR |
Advanced Power Technology |
Power MOSFET | |
2 | APT5010JVRU2 |
Advanced Power Technology |
Power MOSFET | |
3 | APT5010JVRU3 |
Advanced Power Technology |
Power MOSFET | |
4 | APT5010JFLL |
Advanced Power Technology |
Power MOSFET | |
5 | APT5010JLC |
Advanced Power Technology |
Power MOSFET |