APT34N80LC3 - Advanced Power Technology

APT34N80LC3 Super Junction MOSFET

APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET C O OLMOS Power Semiconductors T-MAX™ TO-264 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated www.DataSheet4U.com • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt D G S All Ratings: TC = 25°C.

Features

ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.125 1.0 0.145 50 500 ±200 2.10 3 3.9 (VGS = 10V, ID = 22A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handlin.