APT34N80B2C3 - Microsemi

APT34N80B2C3 Super Junction MOSFET

APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET C O OLMOS Power Semiconductors T-MAX™ TO-264 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Popular T-MAX™ or TO-264 Package www.DataSheet4U.com Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is.

Features

0 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 670 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.125 1.0 0.145 50 500 ±200 2.10 3 3.9 (VGS = 10V, ID = 22A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain.