APT100GT60JR - Advanced Power Technology

APT100GT60JR Thunderbolt IGBT

TYPICAL PERFORMANCE CURVES ® APT100GT60JR 600V www.DataSheet4U.com APT100GT60JR Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • Low Tail Current • RBSOA and SCSOA Rated • .

Features

ing: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 1.5mA, Tj = 25°C) MIN TYP MAX Units 600 3 1.7 4 2.1 2.5 25 2 5 2.5 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedu.