APT100GT60JR |
Part Number | APT100GT60JR |
Manufacturer | Advanced Power Technology |
Description | TYPICAL PERFORMANCE CURVES ® APT100GT60JR 600V www.DataSheet4U.com APT100GT60JR Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Tech... |
Features |
ing: 0.063" from Case for 10 Sec.
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 1.5mA, Tj = 25°C) MIN TYP MAX Units
600 3 1.7 4 2.1 2.5 25
2
5 2.5
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
2
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedu... |
Document |
APT100GT60JR Data Sheet
PDF 430.09KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT100GT60JRDL |
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2 | APT100GT60JRDQ4 |
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3 | APT100GT60B2R |
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4 | APT100GT60B2RG |
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5 | APT100GT60LR |
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