APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-247 • Faster Switching • Lower Leak.
on-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 11 1.00 25 250 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 050-5572 Rev C Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 12.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT1001RBLC |
Advanced Power Technology |
MOSFET | |
2 | APT1001RBN |
Advanced Power Technology |
MOSFET | |
3 | APT1001R1AVR |
Advanced Power Technology |
MOSFET | |
4 | APT1001R1BN |
Advanced Power Technology |
MOSFET | |
5 | APT1001R1BVFR |
Advanced Power Technology |
MOSFET | |
6 | APT1001R1HVR |
Advanced Power Technology |
MOSFET | |
7 | APT1001R3BN |
Advanced Power Technology |
MOSFET | |
8 | APT1001R6BFLL |
Advanced Power Technology |
POWER MOS 7 R FREDFET | |
9 | APT1001R6BN |
Advanced Power Technology |
MOSFET | |
10 | APT1001R6SFLL |
Advanced Power Technology |
POWER MOS 7 R FREDFET | |
11 | APT1001RSLC |
Advanced Power Technology |
MOSFET | |
12 | APT1001RSVR |
Advanced Power Technology |
MOSFET |