D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S S Absolute .
ge Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 20020507 AP7811GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 25 0.5 - Typ. 0.1 10 30 32 2.6 15.5 12 28 41 40 800 460 215 Max. Units 12 1.2 1 25 ±100 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Q.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP7811M |
Advanced Power Electronics |
N-Channel MOSFET | |
2 | AP78L05 |
Diodes Incorporated |
3-TERMINAL POSITIVE REGULATORS | |
3 | AP78L08 |
Diodes Incorporated |
3-TERMINAL POSITIVE REGULATORS | |
4 | AP78L12 |
Diodes Incorporated |
3-TERMINAL POSITIVE REGULATORS | |
5 | AP78T10GP-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | AP7000 |
apx |
TELECOMMUNICATIONS TRANSFORMERS | |
7 | AP7001 |
apx |
TELECOMMUNICATIONS TRANSFORMERS | |
8 | AP7002 |
apx |
TELECOMMUNICATIONS TRANSFORMERS | |
9 | AP7003 |
ETC |
Speech Recognition IC | |
10 | AP7003 |
apx |
TELECOMMUNICATIONS TRANSFORMERS | |
11 | AP7004 |
apx |
TELECOMMUNICATIONS TRANSFORMERS | |
12 | AP7005 |
apx |
TELECOMMUNICATIONS TRANSFORMERS |