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AP7811GM |
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| Part Number | AP7811GM |
| Manufacturer | Advanced Power Electronics |
| Description | D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G G The SO-8 package is ... |
| Features |
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Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit ℃/W
Data and specifications subject to change without notice
20020507
AP7811GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 25 0.5 -
Typ. 0.1 10 30 32 2.6 15.5 12 28 41 40 800 460 215
Max. Units 12 1.2 1 25 ±100 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Q... |
| Document |
 AP7811GM Data Sheet
PDF 78.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP7811M |
Advanced Power Electronics |
N-Channel MOSFET |
|
| 2 | AP78L05 |
Diodes Incorporated |
3-TERMINAL POSITIVE REGULATORS |
|
| 3 | AP78L08 |
Diodes Incorporated |
3-TERMINAL POSITIVE REGULATORS |
|
| 4 | AP78L12 |
Diodes Incorporated |
3-TERMINAL POSITIVE REGULATORS |
|
| 5 | AP78T10GP-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|