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AP730P - Advanced Power Electronics

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AP730P N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed sw.

Features

ng Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 260 5.5 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.7 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200219032 AP730P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 400 2 - Typ. 0.36 30 35.

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