AP6679GM-HF-3 - Advanced Power Electronics

AP6679GM-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET

D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP6679GM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. D D D G SO-8 (M) S.

Features

rating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit °C/W Ordering Information AP6679GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com 200909172-3 1/5 Advanced Power Electronics Corp. Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA AP6679GM-HF-3 Min. -30 Typ. - Max. Units V RDS(ON) Static Drain-Source .