AP40T10GI - Advanced Power Electronics

AP40T10GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD.

Features

Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.0 65 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200810031 AP40T10GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=15A VGS=6V, ID=10A VDS=VGS, ID=250uA VDS=15V, ID=15A VDS=100V, VGS=0V o Min. 100 2 - Typ. 14.5 24 5.4 9.6 9 64 19 75 270 85 Max. Units 36 42 4 25 100 +100 .