AP40T10GH-HF - Advanced Power Electronics

AP40T10GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) Absolute Maximum .

Features

l Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 110 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200805191 AP40T10GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=1mA VGS=10V, ID=15A VGS=6V, ID=10A Min. 100 2 - Typ. 14.5 24 5.4 9.6 9 64 19 75 270 85 Max. Units 35 38 4 10 100 ±100 40 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF p.