S AP4028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is.
V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 41.6 18.6 15 100 25 5 -55 to 150 -55 to 150 V A A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 5 25 Unit ℃/W ℃/W 1 201412032 AP4028GEMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP4028EH |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP4024GEMT-HF |
Advanced Power Electronics |
N-Channel MOSFET | |
3 | AP4025 |
Antel Optronics |
(AP4010 - AP4100) High Performance IR Enhanced P-Type Silicon Photodiodes | |
4 | AP400-B10 |
LEM |
AC Current transducer AP-B10 | |
5 | AP400-B420L |
LEM |
AC Current transducer AP-B420L | |
6 | AP4002H |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | AP4002H-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | AP4002H-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
9 | AP4002I-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
10 | AP4002J |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
11 | AP4002J-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | AP4002J-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |