AP4028 series are from Advanced Power innovated design and silicon process technology to achieve the switching performance. It provides lowest possible on-resistance the designer with an extreme aenffdicˎifeanstt device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount app.
otal Power Dissipation Total Power Dissipation3 TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 45 28 100 29.7 2 -55 to 150 -55 to 150 Units V V A A A W W ɗ ɗ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Data & specifications subject to change without notice Value 4.2 62.5 Units ɗ/W ɗ/W 1 201407292 AP4028EH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AP4028GEMT-HF |
Advanced Power Electronics |
N-Channel MOSFET | |
2 | AP4024GEMT-HF |
Advanced Power Electronics |
N-Channel MOSFET | |
3 | AP4025 |
Antel Optronics |
(AP4010 - AP4100) High Performance IR Enhanced P-Type Silicon Photodiodes | |
4 | AP400-B10 |
LEM |
AC Current transducer AP-B10 | |
5 | AP400-B420L |
LEM |
AC Current transducer AP-B420L | |
6 | AP4002H |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | AP4002H-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | AP4002H-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
9 | AP4002I-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
10 | AP4002J |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
11 | AP4002J-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | AP4002J-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |