AP3303J - Advanced Power Electronics

AP3303J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3303J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TST.

Features

ion-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200811031 AP3303H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=250uA Min. 25 2 - Typ. 0.02 20 14.5 3 8.5 8.8 65 11 7 340 250 98 Max. Units 25 4 1 100 ±100 24 540 V V/℃ mΩ V S uA.