AP3302J - Advanced Power Electronics

AP3302J N-Channel MOSFET

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3302J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TST.

Features

on-case Thermal Resistance Junction-ambient Max. Max. Value 6.4 110 Unit ℃/W ℃/W Data & specifications subject to change without notice 200701031 AP3302H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) www.DataSheet4U.com Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. 25 2 - Typ. 7.4 2.2 4.2 8 7.4 11 3 164 158 62 Max. Units 50 4 1 25 ±100 13 290 V mΩ V uA uA nA nC nC nC.