AP30N30W - Advanced Power Electronics

AP30N30W N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP30N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ .

Features

nge 450 30 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.6 40 Units ℃/W ℃/W Data and specifications subject to change without notice 200916052-1/4 AP30N30W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=1mA Min. 250 1.5 Min. - Typ. 0.24 23 63 19 14 28 36 84 45 550 6 1.9 Typ. 235 2.24 Max. Units 68 3.5 10 100 ±1 100 3 V V/℃ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω .