AP2761R-A-HF - Advanced Power Electronics

AP2761R-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2761 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-262 package is widely preferred for commercial-industrial through-hole applications an.

Features

erating Factor Avalanche Current2 Storage Temperature Range Operating Junction Temperature Range 650 +30 10 4.4 18 104 0.8 10 -55 to 150 -55 to 150 V V A A A W W/℃ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 1.2 62 Units ℃/W ℃/W 1 201501162 AP2761R-A-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Q.