AP2761P-A - Advanced Power Electronics

AP2761P-A N-CHANNEL ENHANCEMENT MODE POWER MOSFET

The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G D S TO-220 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous.

Features

ce Junction-ambient Max. Max. Value 1.2 62 Units ℃/W ℃/W Data & specifications subject to change without notice 200705051-1/4 www.DataSheet4U.com AP2761P-A Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 650 2 - Typ. 0.6 4.5 53 10 15 16 20 82 36 320 8 Max. Units 1 4 10 100 ±100 85 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Co.