AP2309GN-HF - Advanced Power Electronics

AP2309GN-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ I.

Features

ol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W Data and specifications subject to change without notice 1 200807212 AP2309GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=55 C) o Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.02 5 5 1 3 8 5 20 7 412 91 62 Max. Units 75 120 -3 -1 -25 +100 8 660 V V/℃ mΩ mΩ V S u.