AP2301AGN-HF - Advanced Power Electronics

AP2301AGN-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=.

Features

Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 90 Unit ℃/W 1 201303084 Data and specifications subject to change without notice AP2301AGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-2.6A Min. -20 -0.3 - Typ. 10 8.5 1.2 3 10 20 27 22 660 135 120 7.2 Max. Units 97 130 -1 -10 +100 21 1470 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(.