AP1203GH - Advanced Power Electronics

AP1203GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G □ D S TO-252(H) Absolute Max.

Features

er Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.5 62.5 Units ℃/W ℃/W Data & specifications subject to change without notice 1 200812291 AP1203GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.5V, ID=15A Min. 30 1 - Typ. 27 6.7 1.8 4.3 6.5 60 15 5 420 130 75 3.3 Max. Units 12 22 3 10 +100 10.5 670 5 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th).