AOU3N50 - Alpha & Omega Semiconductors

AOU3N50 N-Channel MOSFET

Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline powe.

Features

Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL S DG G Maximum 500 ±30 2.8 1.8 9 2 60 120 50 5 57 0.45 -50 to 150 300 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 45 1.8 Maximum 55 0.5 2.2 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.8.0: March 2016 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol .