AOU3N50 |
Part Number | AOU3N50 |
Manufacturer | Alpha & Omega Semiconductors |
Description | Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applic... |
Features |
Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
S DG
G
Maximum 500 ±30 2.8 1.8 9 2 60 120 50 5 57 0.45
-50 to 150
300
S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Symbol RθJA RθCS RθJC
Typical 45 1.8
Maximum 55 0.5 2.2
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Rev.8.0: March 2016
www.aosmd.com
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
... |
Document |
AOU3N50 Data Sheet
PDF 276.29KB |
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