Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
isc N-Channel MOSFET Transistor AOTF286L ·FEATURES ·Drain Current –ID= 56A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and.
·Drain Current
–ID= 56A@ TC=25℃
·Drain Source Voltage-
: VDSS= 80V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 6.0mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
56
A
IDM
Drain Current-Single Pulsed
225
A
PD
Total Dissipation @TC=25℃
37.5
W
Tj
Max.
AOTF286L - Alpha & Omega Semiconductors
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AOTF280A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor |
|
| 2 | AOTF288L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | AOTF288L |
Alpha & Omega Semiconductors |
80V N-Channel MOSFET |
|
| 4 | AOTF20C60 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 5 | AOTF20C60P |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOTF20N40 |
Alpha & Omega Semiconductors |
20A N-Channel MOSFET |
|
| 7 | AOTF20N40 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | AOTF20N40L |
Alpha & Omega Semiconductors |
20A N-Channel MOSFET |
|
| 9 | AOTF20N60 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | AOTF20N60 |
Alpha & Omega Semiconductors |
20A N-Channel MOSFET |
|
| 11 | AOTF20S60 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | AOTF20S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|