AOTF280A60L - Alpha & Omega Semiconductors

AOTF280A60L N-Channel Power Transistor

• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg.

Features

°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt ±30 14 14
* 9 9
* 56 3.6 6.5 60 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 156 30 1.3 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-.