AOT14N50FD - Alpha & Omega Semiconductors

AOT14N50FD N-Channel MOSFET

Product Summary The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline.

Features

nche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 14 14
* 9.6 9.6
* 56 5 375 750 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT14N50FD 65 0.5 AOTF14N50FD 65 -- Maximum Junction-to-Case RθJC 0.45 2.5
* Drain current limited by maximum junction temperature. Units V V A A mJ mJ V/ns W W/ o.