·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11.5 A IDM Drain Current-Single Pluse 29 A PD Total Dissipation @TC=25℃ 132 W TJ Max. Oper.
·Drain Current
–ID= 11.5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 300V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.42Ω(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
300
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
11.5
A
IDM
Drain Current-Single Pluse
29
A
PD
Total Dissipation @TC=25℃
132
W
.
Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOT12N40 |
INCHANGE |
N-Channel MOSFET | |
2 | AOT12N40 |
Alpha & Omega Semiconductors |
N-Channel MOSFET | |
3 | AOT12N50 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
4 | AOT12N50 |
Freescale |
12A N-Channel MOSFET | |
5 | AOT12N50 |
INCHANGE |
N-Channel MOSFET | |
6 | AOT12N60 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
7 | AOT12N60 |
INCHANGE |
N-Channel MOSFET | |
8 | AOT12N60FD |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
9 | AOT12N60FD |
INCHANGE |
N-Channel MOSFET | |
10 | AOT12N65 |
Alpha & Omega Semiconductors |
12A N-Channel MOSFET | |
11 | AOT12N65 |
INCHANGE |
N-Channel MOSFET | |
12 | AOT125A60L |
Alpha & Omega Semiconductors |
N-Channel Power Transistor |