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AOT12N30 |
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| Part Number | AOT12N30 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Product Summary The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications... |
| Features |
gle pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM IAS EAS dv/dt
11.5
11.5*
7.3
7.3*
29
3.8
430 5
TC=25°C Power Dissipation B Derate above 25oC
PD
132 1
36 0.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
AOT12N30 65 0.5
AOTF12N30 65 --
Maximum Junction-to-Case
RqJC
0.95
3.5
S
Units V V
A
A mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Rev 2.1: April 202... |
| Document |
 AOT12N30 Data Sheet
PDF 422.90KB |
| Distributor | Stock | Price | Buy |
|---|
