AONS66919 - Alpha & Omega Semiconductors

AONS66919 100V N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Qg x RDS(ON) Product (FOM) • Pb-Free lead Plating, RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 85A <.

Features

tion A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 85 62 169 23 19 48 115 113 45 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 0.9 Max 20 50 1.1 Units °C/W °C/W °C/W Rev.1.2: January 2024 www.aosmd.com Page 1 of 6 AONS66919 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Break.