AONS66909 - Alpha & Omega Semiconductors

AONS66909 100V N-Channel MOSFET

• Trench Power AlphaSGTTM technology 100V • Low RDS(ON) • Excellent QG x RDS(ON) • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 100V 160A < 4.2mΩ < 4.8mΩ Applications • High Frequency Switching and Synchronous Rectification. 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom Vie.

Features

ature Range TJ, TSTG Maximum 100 ±20 160 100 340 30 24 63 198 208 83 7.3 4.7 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.45 Max 17 55 0.6 Units °C/W °C/W °C/W Rev.1.1: January 2024 www.aosmd.com Page 1 of 6 AONS66909 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 100 IDSS Zero Gate .