AONS66612T - Alpha & Omega Semiconductors

AONS66612T 60V N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for Fast-Switching Applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 275A < 1.65mΩ < 2.5mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applica.

Features

C=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 275 195 900 48 40 48 346 250 125 7.5 5.2 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State Symbol RqJA RqJC Typ 15 40 0.46 Max 20 50 0.6 Units °C/W °C/W °C/W Rev.2.0: May 2022 www.aosmd.com Page 1 of 6 AONS66612T Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMET.