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AONS66612T |
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| Part Number | AONS66612T |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for Fast-Switching Applications • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=... |
| Features |
C=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 60 ±20 275 195 900 48 40 48 346 250 125 7.5 5.2
-55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
Maximum Junction-to-Case
Steady-State
Symbol RqJA RqJC
Typ 15 40 0.46
Max 20 50 0.6
Units °C/W °C/W °C/W
Rev.2.0: May 2022
www.aosmd.com
Page 1 of 6
AONS66612T
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMET... |
| Document |
 AONS66612T Data Sheet
PDF 377.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AONS66612 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
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| 2 | AONS66613 |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
|
| 3 | AONS66617 |
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60V N-Channel MOSFET |
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| 4 | AONS66620 |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
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| 5 | AONS660A70F |
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