• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 85A < 2.9mΩ < 4.2mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Teste.
eristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Top View 18 27 36 45 Form Tape & Reel D G S Minimum Order Quantity 3000 Maximum 40 ±20 85 85 260 35 28 60 180 48 113.5 45.5 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Typ Max 15 20 40 50 0.9 1.1 Units °C/W °C/W °C/W Rev.1.0: April 2015 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Sourc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AON6232 |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET | |
2 | AON6230 |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET | |
3 | AON6234 |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET | |
4 | AON6236 |
Alpha & Omega Semiconductors |
40V N-Channel MOSFET | |
5 | AON6200 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
6 | AON6200L |
Freescale |
30V N-Channel MOSFET | |
7 | AON6202 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
8 | AON6204 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
9 | AON6206 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
10 | AON6210 |
Alpha & Omega Semiconductors |
30V N-Channel MOSFET | |
11 | AON6220 |
Alpha & Omega Semiconductors |
MOSFET | |
12 | AON6224 |
Alpha & Omega Semiconductors |
100V N-Channel MOSFET |