AON6204 - Alpha & Omega Semiconductors

AON6204 30V N-Channel MOSFET

The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(.

Features

mum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 30 ±20 24 19 110 14 11 21 22 31 13 1.9 1.2 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 29 56 3.3 Max 35 67 4 Units ° C/W ° C/W ° C/W Rev 1 : March 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6204 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID.