AOI514 - Alpha & Omega Semiconductors

AOI514 30V N-Channel MOSFET

• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 46A < 5.9mW < 11.9mW Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100.

Features

5°C Power Dissipation B TC=100°C PD 50 25 TA=25°C Power Dissipation A TA=70°C PDSM 2.5 1.6 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G G D S Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 16 41 Maximum Junction-to-Case Steady-State RqJC 2.5 Max 20 50 3 S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.6.1: January 2024 www.aosmd.com Page 1 of 6 AOD514/AOI514/AOY514 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min T.