AOI508 - Alpha & Omega Semiconductors

AOI508 30V N-Channel MOSFET

• Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 70A < 3mΩ < 4.5mΩ Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS T.

Features

00° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.1mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 41 2.1 Max 20 50 3 Units ° C/W ° C/W ° C/W Rev 1: April 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD508/AOI508 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS.