AOI4T60P - Alpha & Omega Semiconductors

AOI4T60P 4A N-Channel MOSFET

• Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested 700V 16A < 2.1Ω 8.3.

Features

ak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 4 2.4 16 4 8 203 50 5 83 0.7 -55 to 150 300 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 40 1.25 Maximum 50 0.5 1.5 Units °C/W °C/W °C/W Rev.1.0: May 2014 www.aosmd.com Page 1 of 6 Electrical Charac.