AOI4T60 - Alpha & Omega Semiconductors

AOI4T60 4A N-Channel MOSFET

Product Summary The AOD4T60 & AOI4T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supp.

Features

ergy H EAS 145 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 83 0.7 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 40 1.25 Maximum 50 0.5 1.5 D S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.1.0 September 2013 www.aosmd.com Page 1 of 6 AOD4T60/AOI4T60 E.