AOI294A - Alpha & Omega Semiconductors

AOI294A N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • Pb-Free lead Plating, RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Recfification Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 55A <.

Features

=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 55 35 138 16 13 25 31 120 73 30 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 1.35 Max 20 50 1.7 Units °C/W °C/W °C/W Rev.3.0: August 2020 www.aosmd.com Page 1 of 6 AOD294A/AOI294A Electrical Characteristics (TJ=25°C unless .