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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 46 A IDM Drain Current-Single Pluse 110 A PD Total Dissipation @TC=25℃ 59.5 W TJ Max. Opera.
·Drain Current
–ID= 46A@ TC=25℃
·Drain Source Voltage-
: VDSS=60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 9.5mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
46
A
IDM
Drain Current-Single Pluse
110
A
PD
Total Dissipation @TC=25℃
59.5
W
TJ
M.
AOI2610E - Alpha & Omega Semiconductors
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AOI2610 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOI2610 |
Alpha & Omega Semiconductors |
60V N-Channel MOSFET |
|
| 3 | AOI2614 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | AOI2606 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 5 | AOI2606 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | AOI208 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | AOI21357 |
Alpha & Omega Semiconductors |
P-Channel MOSFET |
|
| 8 | AOI2210 |
Alpha & Omega Semiconductors |
200V N-Channel MOSFET |
|
| 9 | AOI2210 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | AOI280A60 |
Alpha & Omega Semiconductors |
N-Channel Power Transistor |
|
| 11 | AOI294A |
INCHANGE |
N-Channel MOSFET |
|
| 12 | AOI294A |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|