AOD4184 - Alpha & Omega Semiconductors

AOD4184 40V N-Channel MOSFET

Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 50.

Features

mum 40 ±20 50 40 120 12 9.5 35 61 50 25 2.3 1.5 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 18 44 Maximum Junction-to-Case Steady-State RθJC 2.4 Max 22 55 3 D G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2. 0: July 2013 www.aosmd.com Page 1 of 6 AOD4184/AOI4184 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V IDSS Zero Gate Vo.