AOC2423 - Alpha & Omega Semiconductors

AOC2423 20V P-Channel MOSFET

The AOC2423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) Typical ESD protection -20V -2A < 80mΩ < 95mΩ < 120mΩ HBM Class2 MCSP 0.97x.

Features

µs pulses, duty cycle 0.5% max Typ 110 160 Max 140 200 D S Units V V A W °C Units °C/W °C/W Rev 0 : Oct. 2012 www.aosmd.com Page 1 of 5 AOC2423 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage ID=-250µA, VGS=0V -20 VDS=-20V, VGS=0V -1 TJ=55°C -5 VDS=0V, VGS=±12V ±10.