Product Summary The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. Vds ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) -30V -3.4A < 45mΩ < 60mΩ WLCSP 1.6x1.6_4 Bottom View 3 D 2 D Top View Equivalent Circuit .
imum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max Units V V A W °C Units °C/W °C/W °C/W Rev 1 : August 2012 www.aosmd.com Page 1 of 5 AOC2411 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Source-Source Breakdown Voltage IDSS Zero Gate Voltage Source Current IGSS VGS(th) Gate leakage current Gate Threshold Voltage RDS(ON) Static Source to Source On-Resistance gFS Forward Transconductance VFSD Diode Forward Voltage DYNAMIC PARAMETERS Note1 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Cap.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AOC2412 |
Alpha & Omega Semiconductors |
20V N-Channel MOSFET | |
2 | AOC2413 |
Alpha & Omega Semiconductors |
8V P-Channel MOSFET | |
3 | AOC2414 |
Alpha & Omega Semiconductors |
8V N-Channel MOSFET | |
4 | AOC2415 |
Alpha & Omega Semiconductors |
20V P-Channel MOSFET | |
5 | AOC2417 |
Alpha & Omega Semiconductors |
20V P-Channel MOSFET | |
6 | AOC2401 |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET | |
7 | AOC2403 |
ALPHA & OMEGA |
20V P-Channel MOSFET | |
8 | AOC2421 |
Alpha & Omega Semiconductors |
8V P-Channel MOSFET | |
9 | AOC2422 |
Alpha & Omega Semiconductors |
8V N-Channel MOSFET | |
10 | AOC2423 |
Alpha & Omega Semiconductors |
20V P-Channel MOSFET | |
11 | AOC2800 |
Alpha & Omega Semiconductors |
Common-Drain Dual N-Channel MOSFET | |
12 | AOC2802 |
Alpha & Omega Semiconductors |
Common-Drain Dual N-Channel MOSFET |