AOB66935L - Alpha & Omega Semiconductors

AOB66935L 100V N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Combined of low RDS(ON) and wide Safe Operating Area (SOA) • Higher in-rush current enabled for faster start-up and shorter down time • RoHS 2.0 and Halogen-Free Compliant Applications • Load switch • BMS • Hot Swap Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tes.

Features

ipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 180 180 800 43 36 100 500 500 250 10 7 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 50 0.23 Max 15 60 0.3 Units °C/W °C/W °C/W Rev.1.0: January 2024 www.aosmd.com Page 1 of 6 AOB66935L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdo.